Ⅲ族氮化物發光二極管技術及其應用檢視原始碼討論檢視歷史

來自 孔夫子網 的圖片

《Ⅲ族氮化物發光二極管技術及其應用》，李晉閩 等 著，出版社： 科學出版社。

科學出版社是由中國科學院編譯局與1930年創建的龍門聯合書局於1954年8月合併成立的；目前公司年出版新書3000多種，期刊500多種，形成了以科學（S）、技術（T）、醫學（M）、教育（E）、人文社科（H）為主要出版領域的業務架構。

內容簡介

《Ⅲ族氮化物發光二極管技術及其應用（英文版）》以作者及其研究團隊多年的研究成果為基礎，系統地介紹了Ⅲ族氮化物發光二極管的材料外延、芯片製作、器件封裝和系統應用，內容集學術性與實用性為一體。《Ⅲ族氮化物發光二極管技術及其應用（英文版）》共12章，內容包括：Ⅲ族氮化物LED的基本原理、材料性質及外延生長理論，InGaN/GaN多量子阱材料及藍、綠光LED，AlGaN/GaN多量子阱材料及紫外LED，Ⅲ族氮化物LED量子效率提升技術、關鍵製備工藝、封裝技術及可靠性分析，LED的應用，最後介紹了當前氮化物LED的一些研究前沿和熱點。

目錄

Contents

1Introduction1

References5

2BasicPrinciplesofLED7

2.1LEDLuminescencePrinciple7

2.1.1HistoryandPrincipleofLightingSource7

2.1.2p-nJunctionandthePrincipleofLEDLuminescence8

2.2RadiationandNon-radiationRecombination10

2.3LEDOpticalandElectricalCharacteristics11

2.3.1LEDQuantumEfficiency11

2.3.2RadiationSpectrum12

2.3.3BasicPhotometricConceptsinLED14

2.3.4ElectricalCharacteristicsofLED14

2.4PrincipleofWhiteLED15

2.4.1ThePrincipleofThreePrimaryColorsandAdditionofLight15

2.4.2TheRealizationMethodofWhiteLED15

References17

3PropertiesandTestingofGroupIII-NitrideLEDMaterials19

3.1CrystalStructureandBandStructureofGroupIIINitride19

3.1.1CrystalStructure19

3.1.2BandStructure21

3.2PolarizationEffectofGroupIIINitrideMaterials23

3.2.1PolarizationEffect23

3.2.2InfluenceofPolarizationEffect24

3.3DopingofGroupIII-NitrideLEDMaterials25

3.3.1DopingofNitrideLEDMaterials25

3.4TestandAnalysisofthePropertiesofGroupIIINitrideMaterials26

3.4.1StructuralandMorphologicalAnalysis26

3.4.2SurfaceandFilmCompositionAnalysis28

3.4.3OtherPhotoelectricTestMethods30

References32

4EpitaxialofIII-NitrideLEDMaterials33

4.1BasicModelsofEpitaxial33

4.1.13-DGrowthMode(Volmer-WeberMode)34

4.1.22-DGrowthMode(Frank-VanderMerweMode)34

4.1.32-Dand3-DMixedGrowthMode(Stranski-KrastanobMode)35

4.2SubstrateforEpitaxialGrowthofIII-NitrideLEDs(Sapphire/Si/SiC/LiAlO2/GaN)36

4.3GroupIIINitrideLEDEpitaxialTechnology38

4.3.1LPEMethod38

4.3.2MBEMethod39

4.3.3MOCVDMethod39

4.3.4HVPEMethod47

4.4Two-StepGrowthMethodforMOCVDGrownNitrideMaterials48

4.4.1SurfaceDynamicsforFilmGrowth48

4.4.2Two-StepGrowthProgramforGaN/SapphirebyMOCVD51

4.5InfluenceofGrowthConditionsonEpitaxialLayerQualityofGroupIIINitrideMaterials53

4.5.1EffectofBufferLayerGrowthConditionsonMaterialQuality54

4.5.2EffectofRoughLayerGrowthConditions63

4.6EpitaxialTechnologyofHighQualityGaNonSiCSubstrate64

4.6.1BasicPropertiesofSiC64

4.6.2NucleationandGrowthofGaNonSiCSubstrate66

4.6.3RootsofGaNStressonSiCSubstrates70

References71

5InGaN/GaNMultipleQuantumWellsMaterialsasWellasBlueandGreenLEDs75

5.1IntroductiontoInGaNMaterialSystem76

5.2PolarizationEffectsinInGaN/GaNMultipleQuantumWellsMaterials77

5.2.1PolarityofGaN-BasedMaterials77

5.2.2SpontaneousPolarizationandPiezoelectricPolarization78

5.3Quantum-ConfinedStarkEffect82

5.3.1EffectonTransitionEnergyLevels83

5.3.2EffectonLuminousIntensity84

5.4CarrierLocalizationinInGaN/GaNMultipleQuantumWells84

5.5GreenLEDandNon-polar，Semi-polarLED86

5.5.1PolarSurfaceHighinCompositionGreenLEDs87

5.5.2Semi-polarandNon-polarMaterials88

5.5.3ResearchProgressonSemi-polarandNon-polarLEDs89

References90

6AlGaN-BasedMultiple-Quantum-WellMaterialsandUVLEDs93

6.1IntroductionofAlGaNMaterialSystem94

6.2OpticalandElectricalPropertiesofAlGaNMaterials97

6.3EpitaxialGrowthandDopingTechniquesforAlGaNMaterials98

6.4StructureDesignandFabricationofUVLEDs103

References108

7III-NitrideLEDQuantumEfficiencyImprovementTechnology113

7.1ThreeStructuresofLED113

7.2InternalQuantumEfficiencyImprovementTechnology116

7.2.1Homo-EpitaxialGrowthofGaN116

7.2.2MultipleQuantumWells118

7.2.3ActiveRegionDoping122

7.2.4ElectronicBarrierLayer122

7.3LightExtractionEfficiencyImprovementTechnology124

7.3.1PatternedSapphireSubstrate124

7.3.2SurfaceRoughening128

7.3.3Reflector130

7.3.4Flip-ChipStructure133

7.3.5PhotonicCrystal134

7.4CurrentInjectionEfficiencyImprovementTechnology134

7.4.1CurrentSpreadingLayer135

7.4.2CurrentDistributionTheory136

7.4.3CurrentBlockingTechnique140

7.5DroopEffect141

7.5.1AugerRecombinationEffect143

7.5.2ElectronicOverflow144

References147

8III-NitrideLEDChipFabricationTechniques151

8.1GroupIIINitrideLEDFabricationProcess151

8.2Photolithography152

8.2.1MaskandPhotoresist153

8.2.2LithographyProcess154

8.3EtchingProcess157

8.3.1EtchingParameters158

8.3.2WetEtchingandDryEtching158

8.3.3EtchingofGaNMaterials159

8.3.4EtchingofITOandSiO2Materials160

8.4EvaporationandSputtering161

8.4.1MetalEvaporation161

8.4.2SiO2PassivationLayer162

8.5OhmicContacts163

8.5.1n-typeGaNOhmicContact163

8.5.2p-typeGaNOhmicContact164

8.5.3SpecificContactResistivity165

8.5.4TransparentElectrodeTechnolog