135,674
次編輯
變更
[[File:王朋3.jpg|缩略图|王朋：1988年2月出生，[[山东省]][[潍坊市]]人，华南先进光电子研究院副研究员，入选[[华南师范大学]]“青年英才”计划]]
'''王朋'''，男，1988年2月出生，汉族，[[山东省]][[潍坊市]]人。中共党员。华南先进光电子研究院副研究员，入选[[华南师范大学]]“青年英才”计划。
==研究经历==
2013年6月在[[中国科学院]]上海微系统与信息技术研究所获得微电子与固体电子学专业博士学位，所在科室为[[美国科学院]]院士、中国分子束外延MBE研究领域创始人[[李爱珍]]老师所建立的化合物半导体实验室。
博士毕业后，同年8月前往[[美国]][[亚利桑那州立大学]]分子束外延MBE实验室开展博士后研究工作。2018年1月入选华南师范大学“青年英才”计划，于华南先进光电子研究院任职特聘副研究员。
===研究领域：===
分子束外延MBE化合物半导体纳米结构材料生长及光电子器件应用研究。
===博士期间主要取得以下研究成果：===
1，首次采用气态源MBE实现Ge基InAs量子点通讯波段1.31um量子点激光器室温连续激射；
2，在稀Bi化合物半导体领域，首次成功外延生长GaAs基晶格匹配四元InGaPBi、InAlPBi单晶薄膜材料；
3，成功制备室温连续激射GaSb基InGaAsSb量子阱2.0-2.7微米室温连续激射激光器，并利用五元InAlGaAsSb势垒实现InGaAsSb量子阱结构室温3.5微米以上发光，为国内领先水平。
关于气态源MBE制备Ge基InAs量子点激光器的工作成为2015年第17届International Conference on Transparent Optical Networks 邀请报告。
博士后工作期间牵头负责世界首台III-V/II-VI集成于同一生长室的MBE设备搭建，并成功使其在项目执行期内实现高质量III-V/II-VI异质结构的外延生长以及与UCSD合作完成美国国防高级研究计划局的高灵敏度量子光电探测器项目。
===代表论文===
1. Maxwell B. Lassise, Peng Wang, Brian D. Tracy, Guopeng Chen, David J.Smith, Yong-Hang Zhang, Growth of II-VI/III-V heterovalent quantum structures. Journal of Vacuum Science & Technology B. 2018, 36:02D110.
2. Peng Wang, Wenwu Pan, Xiaoyan Wu, Juanjuan Liu, Chunfang Cao, Shumin Wang, and Qian Gong, Influence of GaAsBi matrixon optical and structural properties of InAs quantum dots. Nanoscale Research Letters. 2016,11:280.
3. Peng Wang, Wenwu Pan, Chunfang Cao, Xiaoyan Wu, Qian Gong and Shumin Wang, Influence of doping in InP buffer on photoluminescence behavior of InPBi. Japanese Journal of Applied Physics.2016,55:115503.
4. Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, Qian Gong, Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure. Nanoscale Research Letters. 2016, 11:119.
5. Peng Wang, Wenwu Pan, Xiaoyan, Shumin Wang, Qian Gong, Herteroepitaxy growth of GaAsBi on Ge (100) substrate by gas source molecular beam epitaxy. Applied Physics Express. 2016, 9: 045502.
6. Peng Wang, Wenwu Pan, Kai Wang, Xiaoyan Wu, Li Yue, Qian Gong and Shumin Wang, Investigation to the deep centerrelated properties of low temperature grown InPBi with Hall and photoluminescence. AIP Advances, 2015, 5:127104.
7. Peng Wang, Changlian Jin, Huahan Zhan, Xiaohang Chen, Fuchun Xu, Yinghui Zhou,Huiqiong Wang, Junyong Kang. Effects of different substrate surface modifications on the epitaxial ZnO/Si. Journal of Crystal Growth, 2013, 378:245-250.
8. Peng Wang, Changlian Jin, Xuefeng Wu, Huahan Zhan et al. Quality improvement of ZnO thin layers overgrown on Si(100) substrates at room temperature by nitridation pretreatment. AIP Advances, 2012, 2:022139.
9. Xu Yi Zhao, Peng Wang, Chunfang Cao, Jinyi Yan, Fangxing Zha, Hailong Wang, Qian Gong. Annealing effect of the InAs dot-in-well structure grown by MBE. Journal of Crystal Growth, 2017, 480:115-118.
10. Kai Wang, Peng Wang, Wenwu Pan, Xiaoyan Wu, Qian Gong and Shumin Wang, Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy. Semicond. Sci. Technol., 2015, 30:094006.
11. Li Yue, Peng Wang, Kai Wang, Xiaoyanwu, Wenwu Pan, Yaoyao Li, et al., Novel InGaPBi single crystal grown by molecular beam epitaxy, Applied Physics Express, 2015, 8:041201.
12. Wenwu Pan, Peng Wang, Xiaoyan Wu, Kai Wang, Jian Cui, Li Yue, et al.,Growthand materialproperties of InPBi thin films using gas source molecular beam epitaxy. Journal of Alloys and Compounds, 2015, 656: 777.
13. Changlian Jin, Peng Wang, Huahan Zhan, Optimizations of ZnO/Si(100) with ZnO/ZnMgO super lattice buffer layers grown by molecular beam epitaxy. Advanced Materials Research, 2013, 706:172-175.
===专利申请===
1. 王朋 [[龚谦]] [[曹春芳]] [[丁彤彤]] “一种硅基砷化镓复合衬底的制备方法” CN105826169 A, 08/03/2016.
2. 龚谦 王朋 曹春芳 丁彤彤 “GaAs分子束外延生长过程中As原子最高结合律的测量方法” CN 105632965 A, 06/01/2016.
3. [[王庶民]] [[潘文武]] [[李耀耀]] 王朋 [[王凯]] [[吴晓燕]] [[崔健]] “一种半导体材料、半导体薄膜及其制备方法” CN 104810454 A, 07/29/2015.<ref>[http://aoe.scnu.edu.cn/a/20180704/1723.html 华南师范大学华南先进光电子研究所，王朋副教授，2018-07-04]</ref>
==参考文献==
'''王朋'''，男，1988年2月出生，汉族，[[山东省]][[潍坊市]]人。中共党员。华南先进光电子研究院副研究员，入选[[华南师范大学]]“青年英才”计划。
==研究经历==
2013年6月在[[中国科学院]]上海微系统与信息技术研究所获得微电子与固体电子学专业博士学位，所在科室为[[美国科学院]]院士、中国分子束外延MBE研究领域创始人[[李爱珍]]老师所建立的化合物半导体实验室。
博士毕业后，同年8月前往[[美国]][[亚利桑那州立大学]]分子束外延MBE实验室开展博士后研究工作。2018年1月入选华南师范大学“青年英才”计划，于华南先进光电子研究院任职特聘副研究员。
===研究领域：===
分子束外延MBE化合物半导体纳米结构材料生长及光电子器件应用研究。
===博士期间主要取得以下研究成果：===
1，首次采用气态源MBE实现Ge基InAs量子点通讯波段1.31um量子点激光器室温连续激射；
2，在稀Bi化合物半导体领域，首次成功外延生长GaAs基晶格匹配四元InGaPBi、InAlPBi单晶薄膜材料；
3，成功制备室温连续激射GaSb基InGaAsSb量子阱2.0-2.7微米室温连续激射激光器，并利用五元InAlGaAsSb势垒实现InGaAsSb量子阱结构室温3.5微米以上发光，为国内领先水平。
关于气态源MBE制备Ge基InAs量子点激光器的工作成为2015年第17届International Conference on Transparent Optical Networks 邀请报告。
博士后工作期间牵头负责世界首台III-V/II-VI集成于同一生长室的MBE设备搭建，并成功使其在项目执行期内实现高质量III-V/II-VI异质结构的外延生长以及与UCSD合作完成美国国防高级研究计划局的高灵敏度量子光电探测器项目。
===代表论文===
1. Maxwell B. Lassise, Peng Wang, Brian D. Tracy, Guopeng Chen, David J.Smith, Yong-Hang Zhang, Growth of II-VI/III-V heterovalent quantum structures. Journal of Vacuum Science & Technology B. 2018, 36:02D110.
2. Peng Wang, Wenwu Pan, Xiaoyan Wu, Juanjuan Liu, Chunfang Cao, Shumin Wang, and Qian Gong, Influence of GaAsBi matrixon optical and structural properties of InAs quantum dots. Nanoscale Research Letters. 2016,11:280.
3. Peng Wang, Wenwu Pan, Chunfang Cao, Xiaoyan Wu, Qian Gong and Shumin Wang, Influence of doping in InP buffer on photoluminescence behavior of InPBi. Japanese Journal of Applied Physics.2016,55:115503.
4. Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, Qian Gong, Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure. Nanoscale Research Letters. 2016, 11:119.
5. Peng Wang, Wenwu Pan, Xiaoyan, Shumin Wang, Qian Gong, Herteroepitaxy growth of GaAsBi on Ge (100) substrate by gas source molecular beam epitaxy. Applied Physics Express. 2016, 9: 045502.
6. Peng Wang, Wenwu Pan, Kai Wang, Xiaoyan Wu, Li Yue, Qian Gong and Shumin Wang, Investigation to the deep centerrelated properties of low temperature grown InPBi with Hall and photoluminescence. AIP Advances, 2015, 5:127104.
7. Peng Wang, Changlian Jin, Huahan Zhan, Xiaohang Chen, Fuchun Xu, Yinghui Zhou,Huiqiong Wang, Junyong Kang. Effects of different substrate surface modifications on the epitaxial ZnO/Si. Journal of Crystal Growth, 2013, 378:245-250.
8. Peng Wang, Changlian Jin, Xuefeng Wu, Huahan Zhan et al. Quality improvement of ZnO thin layers overgrown on Si(100) substrates at room temperature by nitridation pretreatment. AIP Advances, 2012, 2:022139.
9. Xu Yi Zhao, Peng Wang, Chunfang Cao, Jinyi Yan, Fangxing Zha, Hailong Wang, Qian Gong. Annealing effect of the InAs dot-in-well structure grown by MBE. Journal of Crystal Growth, 2017, 480:115-118.
10. Kai Wang, Peng Wang, Wenwu Pan, Xiaoyan Wu, Qian Gong and Shumin Wang, Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy. Semicond. Sci. Technol., 2015, 30:094006.
11. Li Yue, Peng Wang, Kai Wang, Xiaoyanwu, Wenwu Pan, Yaoyao Li, et al., Novel InGaPBi single crystal grown by molecular beam epitaxy, Applied Physics Express, 2015, 8:041201.
12. Wenwu Pan, Peng Wang, Xiaoyan Wu, Kai Wang, Jian Cui, Li Yue, et al.,Growthand materialproperties of InPBi thin films using gas source molecular beam epitaxy. Journal of Alloys and Compounds, 2015, 656: 777.
13. Changlian Jin, Peng Wang, Huahan Zhan, Optimizations of ZnO/Si(100) with ZnO/ZnMgO super lattice buffer layers grown by molecular beam epitaxy. Advanced Materials Research, 2013, 706:172-175.
===专利申请===
1. 王朋 [[龚谦]] [[曹春芳]] [[丁彤彤]] “一种硅基砷化镓复合衬底的制备方法” CN105826169 A, 08/03/2016.
2. 龚谦 王朋 曹春芳 丁彤彤 “GaAs分子束外延生长过程中As原子最高结合律的测量方法” CN 105632965 A, 06/01/2016.
3. [[王庶民]] [[潘文武]] [[李耀耀]] 王朋 [[王凯]] [[吴晓燕]] [[崔健]] “一种半导体材料、半导体薄膜及其制备方法” CN 104810454 A, 07/29/2015.<ref>[http://aoe.scnu.edu.cn/a/20180704/1723.html 华南师范大学华南先进光电子研究所，王朋副教授，2018-07-04]</ref>
==参考文献==