張立寧檢視原始碼討論檢視歷史
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張立寧，男，北京大學信息工程學院教授。
人物簡歷
西安交通大學 電子科學與技術 學士
香港科技大學 電子及計算機工程 博士
麥吉爾大學 物理系 訪問學者
香港科技大學 電子及計算機工程 研究助理教授 (至2017.12)
深圳大學 電子科學與技術 副教授 (至2020.03)
IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 國際會議IEEE EDTM 技術委員會成員/分會主席，IEEE JEDS 客座編輯(2018)。獲得IEEE EDSSC最佳論文獎(2019)、William Mong納米科學與技術傑出論文獎(2012)等。指導學生獲得IEEE EDSSC最佳學生論文獎(2018)。EDA技術團體標準牽頭人。
研究方向
新型邏輯及存儲器件、電子設計自動化EDA、神經形態器件和計算系統
研究領域
為模型驅動的下一代計算系統，涉及新型微納尺度半導體器件的物理、器件模型和電路模擬方法、電路系統的可靠性、電子設計自動化EDA、神經形態器件和計算系統。目前開展的課題包括先進工藝節點CMOS器件建模、新型邏輯和存儲器件、神經形態器件、電路模擬器的動態時間演進算法和模型降階算法、神經形態電路EDA等。
學術成果
專著
[1]Lining Zhangand Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016
[2]Lining Zhang, Jun Huang, Mansun Chan, 「Steep Slope Devices and TFETs,」 Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.
期刊文章
[1] Z. Wang, Y. Lv,L. Zhang, L. Liao, C. Jiang, 「Strain release enabled bandgap scaling in Ge nanowire and tunnel FET application,」IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4725-4729, Aug. 2022
[2] Z. Ma, C. Estrada, K. Gong,L. Zhang*, M. Chan, 「On-chip integrated high gain complementary MoS2 inverter circuit with exceptional high hole current p-channel field-effect transistors,」Adv. Elec. Mater., doi.org/10.1002/aelm.202200480, July 2022
[3] Y. Jiao, X. Huang, Z. Rong, Z. Ji, R. Wang,L. Zhang*,「Modeling multigate negative capacitance transistors with self-heating effects,」IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3029-3036, June. 2022
[4]N. Feng, H. Li, C. Su,L.Zhang*, Q. Huang, R. Wang, R. Huang, 「A dynamic compact model for ferroelectric capacitance,」IEEE Electron Device Letters, vol. 43, no. 2, pp. 390-393, Mar. 2022
[5] F. Ding, B. Peng, X. Li,L. Zhang*, R. Wang, Z. Song, R. Huang, 「A review of compact modeling for phase change memory,」J. of Semi., vol. 43, no. 2, pp. 023101, Feb. 2022
[6] F. Ding, D. Dong, Y. Chen, X. Lin,L. Zhang*, 「Robust simulations of nanoscale phase change memory: dynamics and retention,」Nanomaterials, vol. 11, no. 11, pp. 2945, Nov. 2021
[7] B. Liu, X. Huang, Y. Jiao, N. Feng, X. Chen, Z. Rong, X. Lin,L. Zhang*, X. Cui, 「Channel doping effects in negative capacitance field-effect transistors,」Solid-State Electronics, vol. 186, pp. 108181, Dec. 2021
[8] X. Chen, F. Ding, X. Huang, X. Lin, R. Wang, M. Chan,L. Zhang*, R. Huang, 「A robust and efficient compact model for phase change memory circuit simulations,」IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4404-4410, Sept. 2021
[9] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang,Lining Zhang*, Ru Huang, 「A dynamic current model for MFIS negative capacitance transistors,」IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021
[10] Z. Huang, S. Xiong, N. Dong,Lining Zhang, X. Lin, 「A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,」IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021
[11] Z. Ma,Lining Zhang*, C. Zhou, M. Chan, 「High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,」IEEE Electron Device Letters, vol. 42, no. 3, pp. 343-346, Mar. 2021
[13] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin,Lining Zhang*, M.Chan, 「A SPICE model of phase change memory for neuromorphic circuits,」IEEE Access, vol. 8, pp.95278-95287, May 2020
[14] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li,Lining Zhang*, 「On the enhanced Miller capacitance of source- gated thin film transistors,」IEEE Electron Device Letters, vol.41, no.5, pp. 741-744, May 2020
[15] Z. Ahmed, Q. Shi, Z. Ma,Lining Zhang*, H. Guo, M. Chan, 「Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,」IEEE Electron Device Letters, vol. 41, no. 1, pp. 171-174, Jan. 2020
[16] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin,Lining Zhang*, M. Chan, 「A compact phase change memory model with dynamic state variables,」IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020
[17]Lining Zhang*, L. Wang, W. Wu, M. Chan, 「Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,」IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019
[18]Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, 「A dynamic time evolution method for concurrent device-circuit aging simulations,」IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019
代表性會議文章：
[1] Qing Shi,Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, 「Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,』 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
[2]Lining Zhang*, Jin He and Mansun Chan, 「A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors」, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA
[3] F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, M. Chan,L. Zhang*, R. Huang, 「Compact modeling of phase change memory with parameter extractions,」 accepted byESSDERC2022
[4] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang,L. Zhang*, R. Huang, 「A dynamic current hysteresis model for thin-film transistors,」 accepted bySISPAD2022
[3] H. Hu,Lining Zhang, X. Lin, M. Chan, 「Modeling the heating effects in PCM for circuit simulation accelerations,」 IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi』an, China [Best Paper Award]
[4] D. Song,Lining Zhang*, D. Liu, H. Zhang, X. Lin, 「An improvement of BSIM for fast circuit simulations,」 IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]
[5] P. Wu, C. Ma,Lining Zhang, X. Lin, M. Chan, 「Investigation of nitrogen enhanced NBTI effect using the universal prediction model,」 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA[1]