林奎至查看源代码讨论查看历史
林奎至,台湾铭传大学电子工程学系专任教师,毕业于国立成功大学电机所博士。主要专长CMOS元件物理和设计、类比积体电路设计、超大型积体电路(VLSI)设计、数位与类比讯号处理。
研究成果
论文名称 | 作者 | 期刊名称 | 发表日期 |
---|---|---|---|
Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors | P. C. Juan, K. C. Lin, H. Y. Chu, Y. C. Kuo, H. W. Wang, and T. Y. Shih | Microelectronics Reliability | 2018.04 |
Leakage Current Mechanism and Effect of Y2O3 Doped with Zr High-K Gate Dielectrics | K. C. Lin, P. C. Juan, C. H. Liu, M. C. Wang, and C. H. Chou | Microelectronics Reliability | 2015.11 |
The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors | K. C. Lin, M. J. Twu, R. H. Deng, and C. H. Liu | Journal of Nanoscience and Nanotechnology | 2015.04 |