檢視张立宁的原始碼

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|<center>'''  张立宁 '''<br><img src=" https://www.ece.pku.edu.cn/__local/9/F7/CF/D663090A0A2FB8011D3EA6DD452_C05638EF_8964.jpg?e=.jpg " width="180"></center><small>[https://www.ece.pku.edu.cn/info/1045/2486.htm 北京大学信息工程学院]</small> 
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'''张立宁'''，男，北京大学信息工程学院教授。
==人物简历==
西安交通大学   电子科学与技术      学士

香港科技大学   电子及计算机工程  博士

麦吉尔大学       物理系                    访问学者

香港科技大学   电子及计算机工程  研究助理教授 (至2017.12)

深圳大学          电子科学与技术      副教授 (至2020.03)

IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 国际会议IEEE EDTM 技术委员会成员/分会主席，IEEE JEDS 客座编辑(2018)。获得IEEE EDSSC最佳论文奖(2019)、William Mong纳米科学与技术杰出论文奖(2012)等。指导学生获得IEEE EDSSC最佳学生论文奖(2018)。EDA技术团体标准牵头人。
==研究方向==
新型逻辑及[[存储器件]]、电子设计自动化EDA、[[神经形态器件]]和计算系统
==研究领域==
为[[模型驱动]]的下一代计算系统，涉及新型微纳尺度半导体器件的物理、器件模型和电路[[模拟]]方法、电路系统的[[可靠性]]、电子设计自动化EDA、神经形态器件和计算系统。目前开展的课题包括先进工艺节点CMOS器件建模、新型逻辑和存储器件、神经形态器件、电路模拟器的动态时间演进算法和模型降阶算法、神经形态电路EDA等。
==学术成果==

=== 专著 ===

[1]Lining Zhangand Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016

[2]Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.

=== 期刊文章 ===

[1] Z. Wang, Y. Lv,L. Zhang, L. Liao, C. Jiang, “Strain release enabled bandgap scaling in Ge nanowire and tunnel FET application,”IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4725-4729, Aug. 2022

[2] Z. Ma, C. Estrada, K. Gong,L. Zhang*, M. Chan, “On-chip integrated high gain complementary MoS2 inverter circuit with exceptional high hole current p-channel field-effect transistors,”Adv. Elec. Mater., doi.org/10.1002/aelm.202200480, July 2022

[3] Y. Jiao, X. Huang, Z. Rong, Z. Ji, R. Wang,L. Zhang*,“Modeling multigate negative capacitance transistors with self-heating effects,”IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3029-3036, June. 2022

[4]N. Feng, H. Li, C. Su,L.Zhang*, Q. Huang, R. Wang, R. Huang, “A dynamic compact model for ferroelectric capacitance,”IEEE Electron Device Letters, vol. 43, no. 2, pp. 390-393, Mar. 2022

[5] F. Ding, B. Peng, X. Li,L. Zhang*, R. Wang, Z. Song, R. Huang, “A review of compact modeling for phase change memory,”J. of Semi., vol. 43, no. 2, pp. 023101, Feb. 2022

[6] F. Ding, D. Dong, Y. Chen, X. Lin,L. Zhang*, “Robust simulations of nanoscale phase change memory: dynamics and retention,”Nanomaterials, vol. 11, no. 11, pp. 2945, Nov. 2021

[7] B. Liu, X. Huang, Y. Jiao, N. Feng, X. Chen, Z. Rong, X. Lin,L. Zhang*, X. Cui, “Channel doping effects in negative capacitance field-effect transistors,”Solid-State Electronics, vol. 186, pp. 108181, Dec. 2021

[8] X. Chen, F. Ding, X. Huang, X. Lin, R. Wang, M. Chan,L. Zhang*, R. Huang, “A robust and efficient compact model for phase change memory circuit simulations,”IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4404-4410, Sept. 2021

[9] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang,Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,”IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021

[10] Z. Huang, S. Xiong, N. Dong,Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,”IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021

[11] Z. Ma,Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,”IEEE Electron Device Letters, vol. 42, no. 3, pp. 343-346, Mar. 2021

[13] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin,Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,”IEEE Access, vol. 8, pp.95278-95287, May 2020

[14] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li,Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,”IEEE Electron Device Letters, vol.41, no.5, pp. 741-744, May 2020

[15] Z. Ahmed, Q. Shi, Z. Ma,Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,”IEEE Electron Device Letters, vol. 41, no. 1, pp. 171-174, Jan. 2020

[16] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin,Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,”IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020

[17]Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019

[18]Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019



代表性会议文章：

[1] Qing Shi,Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA

[2]Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA

[3] F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, M. Chan,L. Zhang*, R. Huang, “Compact modeling of phase change memory with parameter extractions,” accepted byESSDERC2022

[4] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang,L. Zhang*, R. Huang, “A dynamic current hysteresis model for thin-film transistors,” accepted bySISPAD2022

[3] H. Hu,Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]

[4] D. Song,Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]

[5] P. Wu, C. Ma,Lining Zhang, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA<ref>[https://www.ece.pku.edu.cn/index.htm  北京大学信息工程学院]</ref>
==参考资料== 
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[[Category:教授]]