杜剛檢視原始碼討論檢視歷史
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杜剛，男，北京大學集成電路學院教授。
人物履歷
科研/教育經歷
1975年出生於四川，1998年和2003年在北京大學先後獲得理學學士和理學博士學位。2003年進入北京大學信息學院做博士後研究，2005年任副教授，2012年任教授。
研究方向
研究成果
在納米尺度器件模擬方法研究方向，針對不同工作機理器件研究的需要，建立了系列器件模擬工具；（2）針對量子效應影響下的非穩態輸運問題,提出了一種求解波爾茲曼方程的MC模擬方法，建立了Ge、Si、GaAs等材料的三維全能帶MC器件模擬平台,滿足了22nm及以下技術節點器件特性研究的需求；針對新型存儲器件研究的需要,建立了電荷俘獲存儲器（CTM）模擬器，彌補了商用TCAD軟件在新型存儲器件特性模擬方面的不足。目前研究方向：
1. 納米尺度集成電路自熱效應及可靠性研究：從器件到電路的自熱效應影響TCAD模擬和實驗表徵分析評估及建模。
2. 3DNAND 存儲陣列器件及電路可靠性：從器件可靠性仿真到陣列電路的失效率分析模擬，利用TCAD工具對存儲陣列工作模式進行優化。
3. 納米新器件中的輸運現象：利用課題組已有的多層次器件模擬工具，評估和優化設計新結構、新材料器件，建立准彈道特徵的輸運模型及器件模型。
作為骨幹人員先後參加多項國家973子項目、863項目、國家自然科學基金項目，負責一項國家自然科學基金科研項目。在器件模型模擬領域取得了大量創新成果，在國內外期刊和國際會議上發表論文200餘篇。
學術成果
Selected Publications
1. Du, Gang; Liu, Xiaoyan; Xia, Zhiliang; Kang, Jinfeng; Wang, Yi; Han, Ruqi; Yu, HongYu; Kwong, Dim-Lee. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum boltzmann equation. IEEE Transactions on Electron Devices, v 52, n 10, October, 2005, p 2258-2263
2. Du, Gang; Liu, Xiao Yan; Xia, Zhi Liang; Wang, Ya Ke; Hou, Dan Qiong; Kang, Jin Feng; Han, Ru Qi. Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v 44, n 4 B, April, 2005, Solid State Devices and Materials, p 2195-2197
3. Du, Gang; Liu, Xiao-Yan; Han, Ru-Qi. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation Chinese Physics, v 15, n 1, Jan 1, 2006, p177-181
4. Du Gang， Liu Xiaoyan， Xia Zhiliang, Yang Jingfeng and Han Ruqi. Effect of Interface Roughness on the Carrier Transport in Germanium MOSFETs Investigated by Monte Carlo Method. Chinese Physics B, v 19, n 5, p 0573041-0573046, 2010.
5. Du Gang; Liu XiaoYan; Han RuQi. High Frequency Performance of Nano-ScaleUltra-Thin-Body Schottky-Barrier n- MOSFETs. Science China-Information Scienses v 54, n 8, p 1756-1761. AUG 2011
6. Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Wei, Kangliang; Du, Gang. Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES v 62,n 3,p 947-954, MAR 2015
7. Hai Jiang; Longxiang Yin; Yun Li; Nuo Xu; Kai Zhao; Yandong He; Gang Du; Xiaoyan Liu; Xing Zhang. Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. Reliability Physics Symposium (IRPS), 2015
8. Pengying Chang, Xiaoyan Liu, Gang Du, Xing Zhang. Assessment of Hole Mobility in Strained InSb, GaSb and InGaSb Based Ultra-Thin Body pMOSFETs with Different Surface Orientations IEDM 2014
9. Huang, Peng; Wang, Yijiao; Li, Haitong; Gao, Bin; Chen, Bing; Zhang, Feifei; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan. Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching IEEE TRANSACTIONS ON NANOTECHNOLOGY v 13,n 6, p 1127-1132, NOV 2014
10. Wang, Juncheng; Du, Gang; Wei, Kangliang; Zhao, Kai; Zeng, Lang; Zhang, Xing; Liu, Xiaoyan. Mixed-mode analysis of different mode silicon nanowire transistors-based inverter. IEEE Transactions on Nanotechnology, v 13, n 2, p 362-367, March 2014
11. Liu, Gai; Du, Gang; Lu, Tiao; Liu, Xiaoyan; Zhang, Pingwen; Zhang, Xing. Simulation study of quasi-ballistic transport in asymmetric DG-MOSFET by directly solving Boltzmann transport equation. IEEE Transactions on Nanotechnology, v 12, n 2, p 168-173, 2013
12. Wang, Jun-Cheng; Du, Gang; Wei, Kang-Liang; Zhang, Xing; Liu, Xiao-Yan. Three-dimensional Monte Carlo simulation of bulk fin field effect transistor. Chinese Physics B, v 21, n 11, November 2012
13. Wu, Wei; Du, Gang; Liu, Xiaoyan; Sun, Lei; Kang, Jinfeng; Han, Ruqi. Physical-based threshold voltage and mobility models including shallow trench isolation stress effect on nMOSFETs. IEEE Transactions on Nanotechnology, v 10, n 4, p 875-880, July 2011
14. Zhu, Shufang; Wei, Kangliang; Du, Gang; Liu, Xiaoyan. 3D Monte Carlo simulation of gate-all-around germanium nmosfet with effective potential quantum correction. Journal of Circuits, Systems and Computers, v 22, n 10, December 2013
15. Lun, Zhiyuan; Du, Gang; Zhao, Kai；Xiao-Yan Liu, Yi Wang. A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory. SCIENCE CHINA-INFORMATION SCIENCES vol.59,no.12, DEC 2016
16. Zhi-Yuan Lun, Yun Li, Kai Zhao, Gang Du, Xiao-Yan Liu, Yi Wang. Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level. Chinese Physics B, Vol. 25, No. 8, 2016.[1]