论文名称 |
作者 |
期刊名称 |
发表日期
|
---|
Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors |
P. C. Juan, K. C. Lin, H. Y. Chu, Y. C. Kuo, H. W. Wang, and T. Y. Shih |
Microelectronics Reliability |
2018.04
|
Leakage Current Mechanism and Effect of Y2O3 Doped with Zr High-K Gate Dielectrics |
K. C. Lin, P. C. Juan, C. H. Liu, M. C. Wang, and C. H. Chou |
Microelectronics Reliability |
2015.11
|
The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors |
K. C. Lin, M. J. Twu, R. H. Deng, and C. H. Liu |
Journal of Nanoscience and Nanotechnology |
2015.04
|